UNIST Scientists Grow Atomically Thin semiconducting Oxide on Graphene
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By Dr. Zina Jarrahi Cinker
NGA Executive Director
UNIST has introduced a new method to fabricate the world’s thinnest oxide semiconductor. This heterostructure is formed by directly growing a single-atom-thick zinc oxide layer on top of graphene through atomic layer deposition.
The bandgap of the monolayer ZnO is experimentally determined to be ~ 4.0 eV which is quite large and will in turn help with reducing noise and leakage current in devices.
“The heteroepitaxial stack of the thinnest 2D oxide semiconductors on graphene has potential for future optoelectronic device applications associated with high optical transparency and flexibility. Flexible, high-performance devices are indispensable for conventional wearable electronics, which have been attracting attention recently. With this new material, we can achieve truly high-performance flexible devices,” said professor Lee, the lead Materials Scientist at UNIST.
More information: Hyo-Ki Hong et al, Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene, Nano Letters (2017). DOI: 10.1021/acs.nanolett.6b03621