Researchers from Bar-Ilan University in Israel and Yale University in the U.S have reported on a novel device architecture comprising graphene Schottky diode varactors. The team assessed that such devices have great potential for optoelectronics applications.
The team has shown that graphene varactor diodes exhibit significant advantages compared with existing graphene photodetectors, including elimination of high dark currents and enhancement of the external quantum efficiency (EQE).
The researchers’ devices reportedly demonstrated a large photoconductive gain and EQE of up to 37%, fast photoresponse, and low leakage currents at room temperature. Read more here.
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